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STMicroelectronics (ST) has launched a new M-Series IGBT

Post n°50 pubblicato il 12 Dicembre 2014 da fesfsd

STMicroelectronics (STMicroelectronics, called ST; NYSE: STM) has launched a new M Series 1200V IGBT, advanced trench-gate type field stop technology (trench-gate field-stop) features, effectively raising the solar inverter (solar inverters), welding (welding equipment), uninterruptible power supplies (uninterruptible power supplies) and motor drivers and many other industrial applications, energy efficiency goals and reliability.

Looking electronic part as VKI50-12P1 and VS-GA200HS60S1PBF, http://www.igbtexpress.com is a independent distributor for hard to find electronic parts and obsolete components, get quote for more than 500 thousands par from our web will be responsed in 24 work hours, also the electronic components cann't find at our web, our saleman will find it and send the price for the parts which you want buy to you.

Highly optimized continuity and off resistance and low conduction losses (low turn-on loss), so that the new IGBT is particularly suitable for the implementation of improved operating frequency up to 20kHz for hard switching circuit (hard-switching circuit); maximum working raising the temperature to 175 ° C, a wide range of safety work (SOA, safe operating area) without blocking effect (latch-up free), short-circuit withstand time (short-circuit withstand time) 150 ° C for at 10μs, these features ensure the new products with higher reliability in harsh external electrical environment.

New products used in third-generation technology, including new advanced trench gate structure architecture design and optimization of high-voltage IGBT can minimize the voltage overshoot (voltage overshoot), the elimination of oscillations (oscillation) that occur during shutdown, effective reduce power consumption, simplify circuit design. At the same time, low saturation voltage (Vce (sat)) to ensure that the new products with high conduction efficiency. Positive temperature coefficient and a narrow range of saturation voltage simplifies the design of new products in parallel, contribute to improve the power handling capability.

The new products also benefit from the upgrade of conducting energy efficiency. In addition, new products and IGBT reverse parallel (anti-parallel) with a new generation of diode package, with fast recovery time and enhanced recovery softness characteristics, and no significant increase in conduction losses, thus achieving better EMI performance .

40A STGW40M120DF3,25A STGW25M120DF3 and 15A STGW15M120DF3 three products using standard TO-247 package, STGWA40M120DF3, STGWA25M120DF3 and STGWA15M120DF3 three products using long-pin TO-247 package, are currently in mass production.

 
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